Design and average power handling capability analysis of substrate integrated waveguide filters with wide stopband

被引:0
|
作者
Zou, Shengying [1 ,2 ]
Liu, Yang [1 ,3 ]
Xu, Yuedong [1 ,2 ]
Zhang, Xuyao [1 ,3 ]
Wang, Yiqun [4 ]
Lin, Jie [1 ,2 ]
Jin, Peng [1 ,3 ]
机构
[1] Harbin Inst Technol, Minist Educ, Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Peoples R China
[2] Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China
[3] Harbin Inst Technol, Sch Instrumentat Sci & Engn, Harbin 150001, Peoples R China
[4] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Nanofabricat Facil, Suzhou 215123, Peoples R China
基金
中国国家自然科学基金;
关键词
SIW filter; stopband suppression; silicon-based MEMS; APHC; BAND-PASS FILTER; TRANSMISSION ZEROS; SIW; MICROSTRIP; RESONATORS; DIPLEXER;
D O I
10.1088/1361-6463/adc017
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we propose a method to extend the stopband of substrate integrated waveguide (SIW) filters. Utilizing this method, we design and optimize a K-band filter. The proposed filter is based on the SIW with rectangular cavity structures. The coupling coefficient method is applied to design the SIW filter. The positions to suppress high-order modes from the magnetic field distribution at the high-order harmonic frequency are investigated. By introducing slots in the side wall through-holes, the suppression effects of high-order modes are achieved. The upper stopband is broadened while the resonance structure and size of the filter are maintaining. The center frequency, the bandwidth and the out-of-band rectangular coefficient (40 dB/1 dB) of the designed SIW filter are 25.875 GHz, 3.25 GHz, and 1.89, respectively. Furthermore, the bandwidth at the 40 dB stopband is as large as 40 GHz. The designed filter is fabricated by silicon-based micro-electromechanical systems processes such as lithography, electroplating, and deep silicon etching. The measured results of the fabricated SIW filter are in good agreement with the simulated results. Finally, a simplified analysis method of average power handling capacity of SIW is proposed, and the results are more accurate by introducing the temperature feedback mechanism of electrical conductivity.
引用
收藏
页数:10
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