On the Thermal Dependency of Electrical Properties Between MoS2 and WS2-Based 2-D MOSFETs

In this paper, we present a detailed comparative performance analysis between MoS2 and WS2 2-D MOSFETs under varying temperature conditions. Although the WS2 device shows 68.55 mu A/mu m better on current at room temperature than the MOS2 one, the off-state leakage current is found to deteriorate in both cases with an increase in temperature mainly due to thermionic emission. Moreover, a lowering of R-ch and better transconductance behaviour at higher temperatures is observed which is related to the predominant self-heating effect in these nanoscale SB devices. Lastly, it is seen that a thin gate oxide with a mediocre dielectric constant provides the best short-channel performance and device electrostatics for the two devices under consideration.