Degradation of electrical performance of few-layer tungsten selenide-based transistors

被引:0
|
作者
Wan, Ben-Song [1 ]
Zhou, Run-Hui [2 ]
Yang, Wen-Kai [2 ]
Zhang, Qin [2 ]
Liu, Xiang-Yu [2 ]
Tan, Zhi-Fu [2 ]
Pan, Cao-Feng [2 ,3 ]
Peng, Zheng-Chun [1 ,4 ]
机构
[1] Shenzhen Univ, Sch Phys & Optoelect Engn, State Key Lab Radio Frequency Heterogeneous Integr, Shenzhen 518060, Peoples R China
[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 101400, Peoples R China
[3] Beihang Univ, Inst Atom Mfg, Beijing 100191, Peoples R China
[4] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China
来源
RARE METALS | 2025年
基金
中国国家自然科学基金;
关键词
Tungsten selenide; Contact resistance; Thermal effect; Defect state; Van der Waals contact; MOS2; TRANSISTORS; CONTACTS; RESISTANCE; TRANSITION; GRAPHENE;
D O I
10.1007/s12598-024-03147-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconducting transition-metal dichalcogenides (TMDs) have garnered significant interest due to their unique structures and properties, positioning them as promising candidates for novel electronic and optoelectronic devices. However, the performance of TMDs-based devices is hampered by the suboptimal quality of metal electrodes contacting the atomically thin TMDs layers. Understanding the mechanisms that influence contact quality is crucial for advancing TMDs devices. In this study, we investigated the conductive properties of tungsten selenide (WSe2)-based devices with different film thicknesses. Using the transmission line method, a negative correlation between contact resistance and film thickness in multi-electrode devices was revealed. Additionally, repeatability tests conducted at varied temperatures indicated enhanced device stability with increasing film thickness. Theoretical analysis, supported by thermionic emission theory and thermal simulations, suggests that the degradation in electrical properties is primarily due to the thermal effect at the contact interface. Furthermore, we found that van der Waals contacts could mitigate the thermal effect through a metal transfer method. Our findings elucidate the critical role of contact resistance in the electronic performance of 2D material-based field-effect transistors (FETs), which further expands their potential in the next generation of electronic and optoelectronic devices. (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(TMDs)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)WSe2(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)WSe2(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(FET)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).
引用
收藏
页数:13
相关论文
共 50 条
  • [31] Electrical and thermal conductivities of few-layer armchair graphene nanoribbons
    Hamze Mousavi
    Samira Jalilvand
    The European Physical Journal B, 2019, 92
  • [32] Few-layer graphene/ZnO nanowires based high performance UV photodetector
    Boruah, Buddha Deka
    Ferry, Darim B.
    Mukherjee, Anwesha
    Misra, Abha
    NANOTECHNOLOGY, 2015, 26 (23)
  • [33] Improving Electrical Performance of Few-Layer MoS2 FETs via Microwave Annealing
    Yang, Hui
    Li, Chen
    Yue, Lei
    Wen, Chenyu
    Zhang, Junkai
    Wu, Dongping
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (07) : 1116 - 1119
  • [34] Effect of ultrathin Fe dusting layer on electrical transport properties of few-layer MoS2 field-effect transistors
    Wang, Ying
    Qi, Long
    Wu, Yihong
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):
  • [35] Optical evidence for blue shift in topological insulator bismuth selenide in the few-layer limit
    Sapkota, Yub Raj
    Alkabsh, Asma
    Walber, Aaron
    Samassekou, Hassana
    Mazumdar, Dipanjan
    APPLIED PHYSICS LETTERS, 2017, 110 (18)
  • [36] FEW-LAYER MoTe2 SUSPENDED CHANNEL TRANSISTORS AND NANOELECTROMECHANICAL RESONATORS
    Liu, Xia
    Islam, Arnob
    Feng, Philip X-L
    2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019, : 2408 - 2411
  • [37] Locally defined quantum emission from epitaxial few-layer tungsten diselenide
    Wu, Wei
    Dass, Chandriker K.
    Hendrickson, Joshua R.
    Montano, Raul D.
    Fischer, Robert E.
    Zhang, Xiaotian
    Choudhury, Tanushree H.
    Redwing, Joan M.
    Wang, Yongqiang
    Pettes, Michael T.
    APPLIED PHYSICS LETTERS, 2019, 114 (21)
  • [38] Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
    Tarek A. Ameen
    Hesameddin Ilatikhameneh
    Gerhard Klimeck
    Rajib Rahman
    Scientific Reports, 6
  • [39] Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
    Ameen, Tarek A.
    Ilatikhameneh, Hesameddin
    Klimeck, Gerhard
    Rahman, Rajib
    SCIENTIFIC REPORTS, 2016, 6
  • [40] Defining the role of humidity in the ambient degradation of few-layer black phosphorus
    Walia, Sumeet
    Sabri, Ylias
    Ahmed, Taimur
    Field, Matthew R.
    Ramanathan, Rajesh
    Arash, Aram
    Bhargava, Suresh K.
    Sriram, Sharath
    Bhaskaran, Madhu
    Bansal, Vipul
    Balendhran, Sivacarendran
    2D MATERIALS, 2017, 4 (01):