Degradation of electrical performance of few-layer tungsten selenide-based transistors

被引:0
|
作者
Wan, Ben-Song [1 ]
Zhou, Run-Hui [2 ]
Yang, Wen-Kai [2 ]
Zhang, Qin [2 ]
Liu, Xiang-Yu [2 ]
Tan, Zhi-Fu [2 ]
Pan, Cao-Feng [2 ,3 ]
Peng, Zheng-Chun [1 ,4 ]
机构
[1] Shenzhen Univ, Sch Phys & Optoelect Engn, State Key Lab Radio Frequency Heterogeneous Integr, Shenzhen 518060, Peoples R China
[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 101400, Peoples R China
[3] Beihang Univ, Inst Atom Mfg, Beijing 100191, Peoples R China
[4] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China
来源
RARE METALS | 2025年
基金
中国国家自然科学基金;
关键词
Tungsten selenide; Contact resistance; Thermal effect; Defect state; Van der Waals contact; MOS2; TRANSISTORS; CONTACTS; RESISTANCE; TRANSITION; GRAPHENE;
D O I
10.1007/s12598-024-03147-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconducting transition-metal dichalcogenides (TMDs) have garnered significant interest due to their unique structures and properties, positioning them as promising candidates for novel electronic and optoelectronic devices. However, the performance of TMDs-based devices is hampered by the suboptimal quality of metal electrodes contacting the atomically thin TMDs layers. Understanding the mechanisms that influence contact quality is crucial for advancing TMDs devices. In this study, we investigated the conductive properties of tungsten selenide (WSe2)-based devices with different film thicknesses. Using the transmission line method, a negative correlation between contact resistance and film thickness in multi-electrode devices was revealed. Additionally, repeatability tests conducted at varied temperatures indicated enhanced device stability with increasing film thickness. Theoretical analysis, supported by thermionic emission theory and thermal simulations, suggests that the degradation in electrical properties is primarily due to the thermal effect at the contact interface. Furthermore, we found that van der Waals contacts could mitigate the thermal effect through a metal transfer method. Our findings elucidate the critical role of contact resistance in the electronic performance of 2D material-based field-effect transistors (FETs), which further expands their potential in the next generation of electronic and optoelectronic devices. (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(TMDs)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)WSe2(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)WSe2(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(FET)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)TMDs(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).
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