共 50 条
- [1] Degradation of electrical performance of few-layer tungsten selenide-based transistorsB.-S. Wan et al.Degradation of electrical performance of few-layer tungsten selenide-based transistorsRare Metals, 2025, 44 (4) : 2534 - 2546Ben-Song Wan论文数: 0 引用数: 0 h-index: 0机构: Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic Engineering Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic EngineeringRun-Hui Zhou论文数: 0 引用数: 0 h-index: 0机构: Beijing Institute of Nanoenergy and Nanosystems,School of Electronic Information and Electrical Engineering Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic EngineeringWen-Kai Yang论文数: 0 引用数: 0 h-index: 0机构: Beijing Institute of Nanoenergy and Nanosystems,School of Electronic Information and Electrical Engineering Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic EngineeringQin Zhang论文数: 0 引用数: 0 h-index: 0机构: Beijing Institute of Nanoenergy and Nanosystems,School of Electronic Information and Electrical Engineering Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic EngineeringXiang-Yu Liu论文数: 0 引用数: 0 h-index: 0机构: Beijing Institute of Nanoenergy and Nanosystems,School of Electronic Information and Electrical Engineering Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic EngineeringZhi-Fu Tan论文数: 0 引用数: 0 h-index: 0机构: Beijing Institute of Nanoenergy and Nanosystems,School of Electronic Information and Electrical Engineering Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic EngineeringCao-Feng Pan论文数: 0 引用数: 0 h-index: 0机构: Beihang University,Institute of Atomic Manufacturing Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic EngineeringZheng-Chun Peng论文数: 0 引用数: 0 h-index: 0机构: Beijing Institute of Nanoenergy and Nanosystems,School of Electronic Information and Electrical Engineering Shenzhen University,State Key Laboratory of Radio Frequency Heterogeneous Integration, School of Physics and Optoelectronic Engineering
- [2] Polytypism in few-layer gallium selenideNANOSCALE, 2020, 12 (15) : 8563 - 8573Lim, Soo Yeon论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Phys, Seoul 04107, South Korea Sogang Univ, Dept Phys, Seoul 04107, South KoreaLee, Jae-Ung论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Phys, Seoul 04107, South Korea Ajou Univ, Dept Phys, Suwon 16499, South Korea Sogang Univ, Dept Phys, Seoul 04107, South KoreaKim, Jung Hwa论文数: 0 引用数: 0 h-index: 0机构: Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, Ulsan 44919, South Korea Inst Basic Sci, Ctr Multidimens Carbon Mat, Ulsan 44919, South Korea Sogang Univ, Dept Phys, Seoul 04107, South KoreaLiang, Liangbo论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA Sogang Univ, Dept Phys, Seoul 04107, South KoreaKong, Xiangru论文数: 0 引用数: 0 h-index: 0机构: Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA Sogang Univ, Dept Phys, Seoul 04107, South KoreaNguyen, Thi Thanh Huong论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea Sogang Univ, Dept Phys, Seoul 04107, South Korea论文数: 引用数: h-index:机构:Cho, Sunglae论文数: 0 引用数: 0 h-index: 0机构: Univ Ulsan, Dept Phys, Ulsan 44610, South Korea Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 44610, South Korea Sogang Univ, Dept Phys, Seoul 04107, South KoreaCheong, Hyeonsik论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Phys, Seoul 04107, South Korea Sogang Univ, Dept Phys, Seoul 04107, South Korea
- [3] Few-layer HfS2 transistorsScientific Reports, 6Toru Kanazawa论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Department of Physical ElectronicsTomohiro Amemiya论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Department of Physical ElectronicsAtsushi Ishikawa论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Department of Physical ElectronicsVikrant Upadhyaya论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Department of Physical ElectronicsKenji Tsuruta论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Department of Physical ElectronicsTakuo Tanaka论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Department of Physical ElectronicsYasuyuki Miyamoto论文数: 0 引用数: 0 h-index: 0机构: Tokyo Institute of Technology,Department of Physical Electronics
- [4] Few-layer HfS2 transistorsSCIENTIFIC REPORTS, 2016, 6Kanazawa, Toru论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan论文数: 引用数: h-index:机构:Ishikawa, Atsushi论文数: 0 引用数: 0 h-index: 0机构: RIKEN, Metamat Lab, 2-1 Hirosawa, Wako, Saitama 3510198, Japan Okayama Univ, Dept Elect & Elect Engn, Okayama 7008530, Japan RIKEN, Innovat Photon Manipulat Res Team, 2-1 Hirosawa, Wako, Saitama 3510198, Japan Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, JapanUpadhyaya, Vikrant论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, JapanTsuruta, Kenji论文数: 0 引用数: 0 h-index: 0机构: Okayama Univ, Dept Elect & Elect Engn, Okayama 7008530, Japan Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, JapanTanaka, Takuo论文数: 0 引用数: 0 h-index: 0机构: RIKEN, Metamat Lab, 2-1 Hirosawa, Wako, Saitama 3510198, Japan RIKEN, Innovat Photon Manipulat Res Team, 2-1 Hirosawa, Wako, Saitama 3510198, Japan Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Tokyo 2268502, Japan Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan论文数: 引用数: h-index:机构:
- [5] Few-layer antimonene electrical propertiesAPPLIED MATERIALS TODAY, 2021, 24Ares, Pablo论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainPakdel, Sahar论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Madrid 28049, Spain Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainPalacio, Irene论文数: 0 引用数: 0 h-index: 0机构: Inst Mat Sci Madrid ICMM CSIC, ESISNA Grp, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainPaz, Wendel S.论文数: 0 引用数: 0 h-index: 0机构: Univ Fed Rio de Janeiro, Inst Fis, Caixa Postal 68528, BR-21941972 Rio De Janeiro, RJ, Brazil Univ Fed Espirito Santo, Dept Fis, BR-29075910 Vitoria, ES, Brazil Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainRassekh, Maedeh论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Madrid 28049, Spain Univ Guilan, Dept Phys, Rasht 413351914, Iran Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainRodriguez-San Miguel, David论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Madrid 28049, Spain Univ Autonoma Madrid, Inst Adv Res Chem Sci IAdChem, Dept Quim Inorgan, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainAballe, Lucia论文数: 0 引用数: 0 h-index: 0机构: ALBA Synchrotron, Carrer Ilum 2-26, Barcelona 08290, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainFoerster, Michael论文数: 0 引用数: 0 h-index: 0机构: ALBA Synchrotron, Carrer Ilum 2-26, Barcelona 08290, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainRuiz del Arbol, Nerea论文数: 0 引用数: 0 h-index: 0机构: Inst Mat Sci Madrid ICMM CSIC, ESISNA Grp, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainAngel Martin-Gago, Jose论文数: 0 引用数: 0 h-index: 0机构: Inst Mat Sci Madrid ICMM CSIC, ESISNA Grp, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainZamora, Felix论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Madrid 28049, Spain Univ Autonoma Madrid, Inst Adv Res Chem Sci IAdChem, Dept Quim Inorgan, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainGomez-Herrero, Julio论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, SpainJose Palacios, Juan论文数: 0 引用数: 0 h-index: 0机构: Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, Madrid 28049, Spain Univ Autonoma Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain
- [6] Fabrication and Characterization of Few-layer Tungsten Disulfide (WS2) Field Effect Transistors7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,Liu, Xi论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R China Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R ChinaHuang, Heshen论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R China Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R ChinaHuang, Maosen论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R China Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R ChinaLiu, Zhaojun论文数: 0 引用数: 0 h-index: 0机构: Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R China Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China Sun Yat Sen Univ, SYSU CMU Joint Inst Engn, Guangzhou, Guangdong, Peoples R China
- [7] Extrinsic and intrinsic performance effects on the electrical property in few-layer grapheneApplied Physics A, 2016, 122Yow-Jon Lin论文数: 0 引用数: 0 h-index: 0机构: National Changhua University of Education,Institute of PhotonicsCheng-Chun Hung论文数: 0 引用数: 0 h-index: 0机构: National Changhua University of Education,Institute of PhotonicsJian-Jhou Zeng论文数: 0 引用数: 0 h-index: 0机构: National Changhua University of Education,Institute of PhotonicsHsing-Cheng Chang论文数: 0 引用数: 0 h-index: 0机构: National Changhua University of Education,Institute of Photonics
- [8] Extrinsic and intrinsic performance effects on the electrical property in few-layer grapheneAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (02): : 1 - 5Lin, Yow-Jon论文数: 0 引用数: 0 h-index: 0机构: Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan Natl Changhua Univ Educ, Inst Photon, Changhua 500, TaiwanHung, Cheng-Chun论文数: 0 引用数: 0 h-index: 0机构: Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan Natl Changhua Univ Educ, Inst Photon, Changhua 500, TaiwanZeng, Jian-Jhou论文数: 0 引用数: 0 h-index: 0机构: Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan Natl Changhua Univ Educ, Inst Photon, Changhua 500, TaiwanChang, Hsing-Cheng论文数: 0 引用数: 0 h-index: 0机构: Feng Chia Univ, Dept Automat Control Engn, Taichung 407, Taiwan Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
- [9] Flake Electrical Conductivity of Few-Layer GrapheneSCIENTIFIC WORLD JOURNAL, 2014,论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [10] Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect TransistorsCHINESE PHYSICS LETTERS, 2018, 35 (12)Zheng, He-Mei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaSun, Shun-Ming论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLiu, Hao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaHuan, Ya-Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaYang, Jian-Guo论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhu, Bao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLiu, Wen-Jun论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaDing, Shi-Jin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China