RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures

被引：0

作者：

Sarker, Biddut K. ^{[1
]}

Islam, Ahmad E. ^{[2
]}

Crespo, Antonio ^{[2
]}

Hughes, Gary ^{[2
]}

Sepelak, Nicholas P. ^{[1
]}

Walker, Dennis E., Jr. ^{[2
]}

Nishimura, Karen ^{[1
]}

Green, Andrew J. ^{[2
]}

机构：

[1] KBR Inc, Beavercreek, OH 45431 USA

[2] Air Force Res Lab, Wright Patterson AFB, OH USA

来源：

IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE, NAECON 2024 | 2024年

关键词：

maximum cutoff frequency; high temperature; electronics; FET; AlGaN/GaN HEMT; transconductance; RF; gain; ELECTRON-MOBILITY TRANSISTORS; DENSITY;

D O I：

10.1109/NAECON61878.2024.10670677

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

This manuscript presents our recent findings from small signal RF measurements of AlGaN/GaN high-electron-mobility transistors (HEMTs) at different temperatures. We will discuss the temperature-dependent variations of key RF device performance parameters, including extrinsic cutoff frequency (f(T)), maximum gain frequency (f(max)), unilateral power gain (UPG), and maximum stable gain (MSG).

引用

页码：219 / 221

页数：3

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