RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures

被引：0

作者：

Sarker, Biddut K. ^{[1
]}

Islam, Ahmad E. ^{[2
]}

Crespo, Antonio ^{[2
]}

Hughes, Gary ^{[2
]}

Sepelak, Nicholas P. ^{[1
]}

Walker, Dennis E., Jr. ^{[2
]}

Nishimura, Karen ^{[1
]}

Green, Andrew J. ^{[2
]}

机构：

[1] KBR Inc, Beavercreek, OH 45431 USA

[2] Air Force Res Lab, Wright Patterson AFB, OH USA

来源：

IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE, NAECON 2024 | 2024年

关键词：

maximum cutoff frequency; high temperature; electronics; FET; AlGaN/GaN HEMT; transconductance; RF; gain; ELECTRON-MOBILITY TRANSISTORS; DENSITY;

D O I：

10.1109/NAECON61878.2024.10670677

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

This manuscript presents our recent findings from small signal RF measurements of AlGaN/GaN high-electron-mobility transistors (HEMTs) at different temperatures. We will discuss the temperature-dependent variations of key RF device performance parameters, including extrinsic cutoff frequency (f(T)), maximum gain frequency (f(max)), unilateral power gain (UPG), and maximum stable gain (MSG).

引用

页码：219 / 221

页数：3

共 50 条

[21] Investigations of Performances in RF GaN MIS-HEMTs and T-gate Schottky HEMTs with Leakage Current Analysis Using Emission Microscopy
Su, Chin-Ya
Tsai, Meng-Che
Johari, Anant
Gupta, Ankur
Singh, Rajendra
Wu, Tian-Li
2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA, 2024,
[22] Performance Enhancement of Gate-Annealed AlGaN/GaN HEMTs
Mahajan, Somna S.
Malik, Amit
Laishram, Robert
Vinayak, Seema
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2017, 70 (05) : 533 - 538
[23] Fabrication of 50nm T-gate on GaN substrate
Liu, Fan
Gu, Guodong
Zeng, Chunhong
Li, Haijun
Wang, Wei
Zhang, Baoshun
Yuan, Jinshe
ADVANCED COMPOSITE MATERIALS, PTS 1-3, 2012, 482-484 : 2341 - +
[24] RF Performance of Proton-Irradiated AlGaN/GaN HEMTs
Chen, Jin
Zhang, En Xia
Zhang, Cher Xuan
McCurdy, Michael W.
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Kaun, Stephen W.
Kyle, Erin C. H.
Speck, James S.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 2959 - 2964
[25] Performance enhancement of gate-annealed AlGaN/GaN HEMTs
Somna S. Mahajan
Amit Malik
Robert Laishram
Seema Vinayak
Journal of the Korean Physical Society, 2017, 70 : 533 - 538
[26] RF performance of HVPE-grown AlGaN/GaN HEMTS
Mastro, MA
Tsvetkov, D
Soukhoveev, V
Usikov, A
Dmitriev, V
Luo, B
Ren, F
Baik, KH
Pearton, SJ
SOLID-STATE ELECTRONICS, 2004, 48 (01) : 179 - 182
[27] The characteristics of implanted T-gate GaN/AlGaN/GaN-HEMT with short chanel
Ohta, M.
Tajima, T.
Nomoto, K.
Satoh, M.
Nakamura, T.
Kasai, T.
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, 2009, (27): : 97 - 100
[28] Submicrometer copper T-Gate AlGaN/GaN HFETs: The gate metal stack effect
Sun, H. F.
Alt, Andreas R.
Bolognesi, C. R.
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) : 350 - 353
[29] DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths
Lin, Heng-Kuang
Huang, Fan-Hsiu
Yu, Hsiang-Lin
SOLID-STATE ELECTRONICS, 2010, 54 (05) : 582 - 585
[30] Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors
Lee, JS
Liu, DM
Kim, HN
Schuette, ML
Lu, W
Flynn, JS
Brandes, GR
HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2005, : 181 - 185

← 1 2 3 4 5 →