Fault localization of Cold-temperature Scan failures by integrating Soft Defect Localization and Electro-Optical Probing

被引:0
|
作者
Jamil, Imran Arif Abdul [1 ]
Sheng, Foo Loke [1 ]
Pawet, Alwi [1 ]
Jie, Chew Jun [1 ]
Liang, Siow Cheng [1 ]
Hui, Tan Hui [1 ]
Sum, Benjamin Lo Yuen [2 ]
机构
[1] NXP Semicond Sdn Bhd, Failure Anal Lab, Sungai Way Free Trade Ind Zone, Petaling Jaya 47300, Malaysia
[2] Taiwan NXP Semicond Co Ltd, Failure Anal Lab, 10 Jingwu Rd, Kaohsiung 811, Taiwan
关键词
Scan; Soft Defect Localization (SDL); Cold; fault isolation; Electro-Optical Probing (EOP);
D O I
10.1109/IPFA61654.2024.10691051
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Scan testing has been the main method for testing in the semiconductor industry due to its extremely high test coverage and high reliability in determining the suspected region of failure. Scan test failures typically fail solidly across voltage, frequency, and temperature. However, there are scan failures that would only fail at cold temperatures and are classified as temperature-dependent scan failures. Electro-Optical Probing (EOP) analysis is usually performed when the part fails to observe abnormal transistor switching activity. However, The main challenge behind cold temperature scan failures is the inability to perform EOP at very cold temperatures mainly due to tool limitations with conventional tool setup. This paper will further discuss a new approach by performing EOP at room temperature on three different types of scan failures (Stuck-at, Time-delay, and Chain) that would still yield tangible fault isolation results by referencing the Soft Defect Localization (SDL) hotspot performed at cold temperature.
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页数:8
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