Highly sensitive investigation of sirolimus by development of an ion-sensitive field effect transistor based on NH2-MIL-53(Fe)

被引:0
|
作者
Nemati, Seyed Saman [1 ]
Seresht, Mohammad Hosein Salemi [2 ]
Dehghan, Gholamreza [1 ]
Abdi, Yaser [2 ]
机构
[1] Univ Tabriz, Fac Nat Sci, Dept Biol, Lab Biochem & Mol Biol, Tabriz 5166616471, Iran
[2] Univ Tehran, Dept Phys, Nanophys Res Lab, Tehran 1439955961, Iran
关键词
Sensor; Sirolimus; NH 2-MIL-53(Fe); Ion-sensitive field-effect transistor; Electrochemistry; LIQUID-CHROMATOGRAPHY; MAMMALIAN TARGET; RAPAMYCIN; BLOOD; MTOR;
D O I
10.1016/j.sna.2024.116141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sirolimus (Sir) is widely used in organ transplant patients because it inhibits the mechanistic target of rapamycin (mTOR) activity and suppresses the immune system. In addition, Sir affects translation, biological processes, as well as various other cell signaling pathways. Therefore, it is essential to determine its systemic concentration clinically. However, determining Sir concentration using optical, chromatographic, and mass spectrometry techniques is expensive, time-consuming, and technically challenging. Here, we used an ISFET-based electrochemical sensor, based on the NH2-MIL-53(Fe) sensing layer, to detect Sir. NH2-MIL-53(Fe) to iron and amine active functional groups is quickly immobilized on the surface of ISFET with a ZnO-sensitive layer. It detects Sir using adsorption, redox process, and high electron transfer ability. The proposed sensor detected Sir with LOD and LOQ 33.8 nM and 102.43 nM, respectively. In addition, it had a high sensitivity of 80.109 mu A.nM- 1 and 28.688 mu A.nM- 1, respectively in buffer and urine. Also, this sensor had reproducibility of results with RSD 2.79 % and reusability in seven consecutive days (76.93-100 % recovery). The NH2-MIL-53(Fe)/ZnO@ISFET is proposed as a cheap, miniaturizable, high-sensitivity real-time sensing method.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Aptamer based vanillin sensor using an ion-sensitive field-effect transistor
    Kuznetsov, Alexander
    Komarova, Natalia
    Andrianova, Maria
    Grudtsov, Vitaliy
    Kuznetsov, Evgeniy
    MICROCHIMICA ACTA, 2018, 185 (01)
  • [22] ION-SENSITIVE FIELD-EFFECT TRANSISTOR FOR PK AND PNA SENSING
    AKIYAMA, T
    NIKI, E
    PURE AND APPLIED CHEMISTRY, 1987, 59 (04) : 535 - 538
  • [23] A Platinum Reference Electrode for Ion-Sensitive Field-Effect Transistor
    Zhao, Dan
    Zhang, Junkai
    Zhang, Jingwei
    Xu, Ming
    Wu, Dongping
    IEEE SENSORS JOURNAL, 2019, 19 (06) : 2003 - 2008
  • [24] Low Temperature Packaging for Ion-Sensitive Organic Field Effect Transistor
    Tang, Yixiao
    Tang, Wei
    Huang, Yukun
    Song, Yawen
    Ouyang, Bang
    Guo, Xiaojun
    2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
  • [25] ION-SENSITIVE FIELD-EFFECT TRANSISTOR WITH IMPROVED MEMBRANE ADHESION
    UFER, S
    CAMMANN, K
    SENSORS AND ACTUATORS B-CHEMICAL, 1992, 7 (1-3) : 572 - 575
  • [26] A novel model for graphene-based ion-sensitive field-effect transistor
    El-Grour, Tarek
    Najari, Montasar
    El-Mir, Lassaad
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (01) : 297 - 303
  • [27] Immunological Helicobacter pylori urease analyzer based on ion-sensitive field effect transistor
    Sekiguchi, T
    Nakamura, M
    Kato, M
    Nishikawa, K
    Hokari, K
    Sugiyama, T
    Asaka, M
    SENSORS AND ACTUATORS B-CHEMICAL, 2000, 67 (03) : 265 - 269
  • [28] Ion-Sensitive Field-Effect Transistor-Based Biosensors: The Sources of Gates and Their Sensitive Layers-A Review
    Nemati, Seyed Saman
    Dehghan, Gholamreza
    Sheibani, Nader
    Abdi, Yaser
    IEEE SENSORS JOURNAL, 2024, 24 (11) : 17324 - 17336
  • [29] From ion-sensitive field-effect transistor to 2D materials field-effect-transistor biosensors
    Rizzato, Silvia
    Monteduro, Anna Grazia
    Leo, Angelo
    Todaro, Maria Teresa
    Maruccio, Giuseppe
    ELECTROCHEMICAL SCIENCE ADVANCES, 2023, 3 (06):
  • [30] Advances in chemical sensors, biosensors and microsystems based on ion-sensitive field-effect transistor
    Khanna, V. K.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2007, 45 (04) : 345 - 353