Highly sensitive and efficient 1550 nm photodetector for room temperature operation

被引:0
|
作者
Rituraj [1 ]
Yu, Zhi Gang [2 ]
Kandegedara, R. M. E. B. [3 ]
Fan, Shanhui [4 ]
Krishnamurthy, Srini [2 ,3 ]
机构
[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
[2] Sivananthan Labs, Bolingbrook, IL 60440 USA
[3] Univ Illinois, Microphys Lab, Chicago, IL 60607 USA
[4] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
关键词
SEMICONDUCTORS; LAYER;
D O I
10.1063/5.0238863
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few-photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in this segment is avalanche photodetectors operating particularly in the Geiger mode. However, for superior performance, a trade-off has to be made between temperature of operation, device thickness, and EQE. Two-dimensional (2D) materials can be used to reduce the absorber thickness and thus dark current, leading to an increase in the operating temperature, but they suffer from low EQE. We use specifically stacked bilayer hexagonal BAs, with material properties calculated from first principles, on a co-optimized dielectric photonic crystal substrate to simultaneously decrease the dark current by three orders of magnitude at RT and maintain an EQE of >99%. The device can potentially be used in avalanche mode and hence can form a basis for single photon detection. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(https://creativecommons.org/licenses/by/4.0/).https://doi.org/10.1063/5.0238863
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页数:7
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