Metamorphic InAs/InGaAs Quantum Dot Heterostructures for Single-Photon Generation in the C-Band Spectral Range

被引：0
|
作者：
S. V. Sorokin [1 ]
G. V. Klimko [1 ]
I. V. Sedova [1 ]
O. E. Lakuntsova [1 ]
A. I. Galimov [1 ]
Yu. M. Serov [1 ]
A. I. Veretennikov [1 ]
L. A. Snigirev [1 ]
A. A. Toropov [1 ]
机构：
[1] Ioffe Institute,
来源：
JETP Letters | 2025年 / 121卷 / 1期
关键词：
D O I：
10.1134/S0021364024604743
中图分类号：
学科分类号：
摘要：
Heterostructures with InAs/InGaAs quantum dots and InxGa1–xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the InxGa1–xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al0.9Ga0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.
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页码：35 / 40
页数：5
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