Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot

We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \sim $$\end{document}1 MHz at the first lens with a second-order correlation function of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{g}^{{(2)}}}(0)$$\end{document} = 0.14.