Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot

被引:0
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作者
A. I. Veretennikov [1 ]
M. V. Rakhlin [1 ]
Yu. M. Serov [1 ]
A. I. Galimov [1 ]
G. P. Veyshtort [1 ]
S. V. Sorokin [1 ]
G. V. Klimko [1 ]
I. V. Sedova [1 ]
N. A. Maleev [1 ]
M. A. Bobrov [1 ]
A. P. Vasiliev [1 ]
A. G. Kuzmenkov [2 ]
M. M. Kulagina [1 ]
Yu. M. Zadiranov [1 ]
S. I. Troshkov [1 ]
Yu. A. Salii [1 ]
D. S. Berezina [1 ]
E. V. Nikitina [1 ]
A. A. Toropov [1 ]
机构
[1] Ioffe Institute,
[2] Submicron Heterostructures for Microelectronics,undefined
[3] Research and Engineering Center,undefined
[4] Russian Academy of Sciences,undefined
[5] Laboratory of Nanoelectronics,undefined
[6] St. Petersburg Academic University,undefined
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D O I
10.1134/S0021364024605116
中图分类号
学科分类号
摘要
We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \sim $$\end{document}1 MHz at the first lens with a second-order correlation function of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{g}^{{(2)}}}(0)$$\end{document} = 0.14.
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页码:170 / 174
页数:4
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