共 50 条
Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot
被引:0
|作者:
A. I. Veretennikov
[1
]
M. V. Rakhlin
[1
]
Yu. M. Serov
[1
]
A. I. Galimov
[1
]
G. P. Veyshtort
[1
]
S. V. Sorokin
[1
]
G. V. Klimko
[1
]
I. V. Sedova
[1
]
N. A. Maleev
[1
]
M. A. Bobrov
[1
]
A. P. Vasiliev
[1
]
A. G. Kuzmenkov
[2
]
M. M. Kulagina
[1
]
Yu. M. Zadiranov
[1
]
S. I. Troshkov
[1
]
Yu. A. Salii
[1
]
D. S. Berezina
[1
]
E. V. Nikitina
[1
]
A. A. Toropov
[1
]
机构:
[1] Ioffe Institute,
[2] Submicron Heterostructures for Microelectronics,undefined
[3] Research and Engineering Center,undefined
[4] Russian Academy of Sciences,undefined
[5] Laboratory of Nanoelectronics,undefined
[6] St. Petersburg Academic University,undefined
关键词:
D O I:
10.1134/S0021364024605116
中图分类号:
学科分类号:
摘要:
We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of \documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$$ \sim $$\end{document}1 MHz at the first lens with a second-order correlation function of \documentclass[12pt]{minimal}
\usepackage{amsmath}
\usepackage{wasysym}
\usepackage{amsfonts}
\usepackage{amssymb}
\usepackage{amsbsy}
\usepackage{mathrsfs}
\usepackage{upgreek}
\setlength{\oddsidemargin}{-69pt}
\begin{document}$${{g}^{{(2)}}}(0)$$\end{document} = 0.14.
引用
收藏
页码:170 / 174
页数:4
相关论文