Metamorphic InAs/InGaAs Quantum Dot Heterostructures for Single-Photon Generation in the C-Band Spectral Range

被引：0

作者：

S. V. Sorokin ^{[1
]}

G. V. Klimko ^{[1
]}

I. V. Sedova ^{[1
]}

O. E. Lakuntsova ^{[1
]}

A. I. Galimov ^{[1
]}

Yu. M. Serov ^{[1
]}

A. I. Veretennikov ^{[1
]}

L. A. Snigirev ^{[1
]}

A. A. Toropov ^{[1
]}

机构：

[1] Ioffe Institute,

来源：

JETP Letters | 2025年 / 121卷 / 1期

关键词：

D O I：

10.1134/S0021364024604743

中图分类号：

学科分类号：

摘要：

Heterostructures with InAs/InGaAs quantum dots and InxGa1–xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the InxGa1–xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al0.9Ga0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.

引用

页码：35 / 40

页数：5

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