Electric-Field-Induced Instability of Redox-Exfoliated Layered Transition Metal Dichalcogenides

被引：0

作者：

Machado, Yan D. R. ^{[1
]}

Prando, Gabriela A. ^{[1
,6
]}

Araujo, Leonardo F. ^{[1
]}

da Silva, Leandro V. ^{[2
]}

Salles, Maiara O. ^{[2
]}

Grasseschi, Daniel ^{[2
]}

Margulis, Walter ^{[1
]}

Chalmpes, Nikolaos ^{[4
]}

Vaia, Richard A. ^{[5
]}

Gomes, Anderson S. L. ^{[3
]}

Carvalho, Isabel C. S. ^{[1
]}

机构：

[1] Pontif Catholic Univ Rio de Janeiro, Dept Phys, BR-22451900 Rio De Janeiro, Brazil

[2] Univ Fed Rio de Janeiro, Chem Inst, Inorgan Chem Dept, BR-21941909 Rio De Janeiro, Brazil

[3] Univ Fed Pernambuco, Dept Phys, BR-50670901 Recife, Brazil

[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14850 USA

[5] Wright Patterson AFB, AFB Res Labs, Mat & Mfg Directorate, Dayton, OH 45433 USA

[6] RISE Res Inst Sweden, S-16440 Stockholm, Sweden

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2025年 / 129卷 / 05期

关键词：

ELECTROCHEMICAL PROPERTIES;

D O I：

10.1021/acs.jpcc.4c07187

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Redox-exfoliated layered transition metal dichalcogenides (LTMDs) find many applications in nonlinear optics, displays, and electronics. The investigated redox LTMD suspensions in this work were characterized optically and found to be highly stable due to surface anionic polyoxometalates (POMs), which maintained the separation between sheets by Coulombic repulsion. However, exposure of the uniform suspensions of LTMDs to an electric field led to agglomeration of the TMDs into clumps of the material in a nearly transparent solvent. This was attributed to the electrochemical reduction of the surface anionic POMs. The electrochemical stability of the redox-exfoliated ACN-MoS2 samples was also investigated by cyclic voltammetric measurements, which confirmed the POM reduction process. This study highlights that the stability of the LTMD/POM system can be compromised by the application of a low-intensity electric field and has bearings on its reliability in optoelectronic devices.

引用

页码：2582 / 2589

页数：8

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