Material removal mechanism in Fenton based AlN ceramic substrate polishing process

被引：0
|
作者：
Zhao, Liang [1 ,2 ]
Feng, Kaiping [1 ,2 ]
Wang, Jiahuan [1 ]
Xu, Lanxing [1 ,2 ]
Zhao, Tianchen [2 ]
Lyu, Binghai [1 ]
机构：
[1] Zhejiang Univ Technol, Ultraprecis Machining Ctr, 18 Chaowang Rd, Hangzhou 310014, Zhejiang, Peoples R China
[2] Quzhou Univ, Coll Mech Engn, 78 North Jiuhua Rd, Quzhou 324000, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2025年 / 51卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Molecule dynamic; Aluminum nitride ceramic; Fenton reaction; Surface roughness;
D O I：
10.1016/j.ceramint.2024.12.297
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Aluminum nitride ceramic substrates are crucial components in power electronics, with surface quality directly impacting product performance. This study introduces the Fenton reagent as a polishing fluid to improve polishing efficiency and surface quality. Molecular dynamics is employed to compare reactivity in water and hydroxy environment. Oxidation experiments confirm the utility of Fenton reagent in polishing. Friction and wear experiments carried out further support the efficacy, with wear debris analysis indicating increased reactivity in Fenton reagent. Various Fenton reagent formulations are tested in polishing experiments, revealing a material removal rate of 123.43 nm/min with the composition of 0.6 wt% FeSO4 and 1 wt% H2O2. Polishing performance in Fenton reagent is compared to water, showing the surface roughness Ra of 14.1 nm after 110 min.
引用
收藏
页码：8674 / 8689
页数：16
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