Material removal mechanism in Fenton based AlN ceramic substrate polishing process

被引：0
|
作者：
Zhao, Liang [1 ,2 ]
Feng, Kaiping [1 ,2 ]
Wang, Jiahuan [1 ]
Xu, Lanxing [1 ,2 ]
Zhao, Tianchen [2 ]
Lyu, Binghai [1 ]
机构：
[1] Zhejiang Univ Technol, Ultraprecis Machining Ctr, 18 Chaowang Rd, Hangzhou 310014, Zhejiang, Peoples R China
[2] Quzhou Univ, Coll Mech Engn, 78 North Jiuhua Rd, Quzhou 324000, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2025年 / 51卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Molecule dynamic; Aluminum nitride ceramic; Fenton reaction; Surface roughness;
D O I：
10.1016/j.ceramint.2024.12.297
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Aluminum nitride ceramic substrates are crucial components in power electronics, with surface quality directly impacting product performance. This study introduces the Fenton reagent as a polishing fluid to improve polishing efficiency and surface quality. Molecular dynamics is employed to compare reactivity in water and hydroxy environment. Oxidation experiments confirm the utility of Fenton reagent in polishing. Friction and wear experiments carried out further support the efficacy, with wear debris analysis indicating increased reactivity in Fenton reagent. Various Fenton reagent formulations are tested in polishing experiments, revealing a material removal rate of 123.43 nm/min with the composition of 0.6 wt% FeSO4 and 1 wt% H2O2. Polishing performance in Fenton reagent is compared to water, showing the surface roughness Ra of 14.1 nm after 110 min.
引用
收藏
页码：8674 / 8689
页数：16
相关论文
共 50 条
  • [21] Research on the Material Removal Mechanism in Deliquescent Polishing of KDP Crystals
    Zhang, Feihu
    Guo, Shaolong
    Zhang, Yong
    Luan, Dianrong
    ADVANCES IN GRINDING AND ABRASIVE TECHNOLOGY XV, 2009, 416 : 487 - 491
  • [22] Material removal mechanism of single crystal silicon by bonnet polishing
    Zhong Bo
    Zheng Nan
    Li Jie
    Chen Xian-hua
    NOVEL OPTICAL SYSTEMS, METHODS, AND APPLICATIONS XXIV, 2021, 11815
  • [23] Analysis of material removal mechanism in magnetorheological jet polishing by CFD
    College of Mechatronics Engineering and Automation, National Univ. of Defense Technology, Changsha 410073, China
    Guofang Keji Daxue Xuebao, 2007, 4 (110-115):
  • [24] SIMS study on the initial oxidation process of AlN ceramic substrate in the air
    Yue, RF
    Wang, Y
    Wang, YX
    Chen, CH
    APPLIED SURFACE SCIENCE, 1999, 148 (1-2) : 73 - 78
  • [25] Disclosing AlN ceramic substrate process failure mode and effect analysis
    Hung, Shiu-Wan
    Chen, Ting-Ko
    MICROELECTRONICS RELIABILITY, 2019, 103
  • [26] Material removal characteristics of full aperture optical polishing process
    Pal, Raj Kumar
    Garg, Harry
    Karar, Vinod
    MACHINING SCIENCE AND TECHNOLOGY, 2017, 21 (04) : 493 - 525
  • [27] A micro-model of the material removal depth for the polishing process
    Junde Qi
    Dinghua Zhang
    Shan Li
    Bing Chen
    The International Journal of Advanced Manufacturing Technology, 2016, 86 : 2759 - 2770
  • [28] A micro-model of the material removal depth for the polishing process
    Qi, Junde
    Zhang, Dinghua
    Li, Shan
    Chen, Bing
    INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, 2016, 86 (9-12): : 2759 - 2770
  • [29] In-process measurements of material removal in fluid jet polishing
    van Brug, H
    Groeneveld, M
    Booij, SM
    Braat, JJM
    INTERFEROMETRY XI: APPLICATIONS, 2002, 4778 : 243 - 250
  • [30] Theoretical investigation for the material removal rate of metal polishing process
    Jeng, Y. R.
    Huang, P. Y.
    Tsai, H. J.
    PROCEEDINGS OF THE 35TH INTERNATIONAL MATADOR CONFERENCE: FORMERLY THE INTERNATIONAL MACHINE TOOL DESIGN AND RESEARCH CONFERENCE, 2007, : 207 - +
12345