AnovelLi-ionbasedtransistorwithinLiCoO2/Li6.75La3Zr1.5Ta0.5O12/Agscheme

被引:0
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作者
Jixiang Yin [1 ,2 ]
Houning Song [2 ]
Peirong Li [1 ]
Yuzhi Xing [2 ]
Supeng Chen [1 ]
Qi Liang [1 ]
Yu Feng [1 ]
Dong Yang [1 ]
Wenxiao Zhao [2 ]
Dong Wang [2 ]
Qinghao Li [1 ]
Pengfei Yu [3 ]
Qiang Li [1 ]
Xiaosong Liu [4 ]
Yanxue Chen [2 ]
机构
[1] College of Physics, Qingdao University
[2] School of Physics, State Key Laboratory of Crystal Materials, Shandong University
[3] Center for Transformative Science, ShanghaiTech University
[4] National Synchrotron Radiation Laboratory, University of Science and Technology of
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TM912 [蓄电池]; TB321 [无机质材料];
学科分类号
摘要
Traditional electronic devices are reaching their physical limits as they shrink in size to improve integration. Solid ionic devices have become promising candidate to avoid tunneling effect and address these constraints, but the response time are typically sluggish. In recent years, the rapid development of solid electrolyte and solid-state battery provide superior choices to overcome limitations in ion transport. In this work, we construct an ionic transistor within Ag/LiCoO2/Li6.75La3Zr1.5Ta0.5O12(LLZTO)/Ag structure. LiCoO2 serves as the channel layer of the transistor, with LLZTO acting as the electrolyte to isolate electrons and facilitate ion conduction, and Ag as the gate/anode. XRD, Raman spectroscopy, and electrochemical characterization confirm lithiation and delithiation.Transport characterization demonstrates the continuous resistive switching of the LiCoO2 channel layer between high and low resistive states under pulsed gate voltage control, exhibiting high reversibility and long cycle stability. By combining X-ray absorption spectroscopy(XAS) and X-ray emission spectroscopy(XES), the transition between high and low resistive states can be well clarified by a first-order Mott transition scheme. These results provide new perspectives for performance improvement and further development of ionic devices.
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页码:194 / 200
页数:7
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