An efficient design methodology for a tri-state multiplier circuit in carbon nanotube technology

被引:0
|
作者
Ul Haq, Shams [1 ]
Orouji, Maedeh [2 ]
Khurshid, Tabassum [3 ]
Abbasian, Erfan [2 ]
机构
[1] Jamia Millia Islamia, Dept Elect & Commun Engn, New Delhi 110025, India
[2] Babol Noshirvani Univ Technol, Dept Elect & Comp Engn, Babol 4714871167, Iran
[3] Shri Mata Vaishno Devi Univ, Sch Elect & Commun Engn, Katra 182320, India
关键词
carbon nanotube field-effect transistor (CNTFET); multiple-valued logic (MVL); ternary multiplier (TMUL); circuit design methodology; TERNARY; ADDER;
D O I
10.1088/1402-4896/ad9646
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This study delves into the computational aspects of ternary logic and the use of carbon nanotube fi eld- effect transistors ( CNTFETs ) to develop an energy-efficient and robust ternary multiplier ( TMUL ) . Leveraging the exceptional qualities of CNTFETs, such as balanced electron and hole mobility and easy modulation of threshold voltage, the research aims to achieve the desired designs. An innovative design method is employed, recommending a reduced count of logic gates for achieving necessary logic levels. These gates are then utilized to manage the activation and deactivation of the primary transistors within the TMUL cell to convey the intended logics to the outputs. Moreover, the suggested design is focused on a single-V-DD, enhancing compatibility with the goals of a multi-valued logic platform. The proposed circuit is validated using Synopsis HSPICE simulator and Stanford's standard 32-nm CNTFET model fi le. Comparative analysis with existing TMUL designs demonstrates a 25.43% decrease in average power consumption, a 42.24% reduction in power-delay product ( PDP ) , and a 24.69% decrease in energy-delay product ( EDP ) . The design undergoes thorough simulations under various conditions including load variations and process, voltage, and temperature ( PVT ) fl uctuations to confirm its reliability and robustness.
引用
收藏
页数:16
相关论文
共 50 条
  • [1] Tri-state GNRFET-based fast and energy-efficient ternary multiplier
    Ul Haq, Shams
    Abbasian, Erfan
    Khurshid, Tabassum
    Fathi, Hanaa
    Sharma, Vijay Kumar
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2024, 177
  • [2] The information technology industry in the tri-state region
    Appapillai, M
    TECHNOLOGY LINK TO ECONOMIC DEVELOPMENT: PAST LESSONS AND FUTURE IMPERATIVES, 1996, 787 : 87 - 100
  • [3] TTL AND-OR-INVERT GATE AS A TRI-STATE CIRCUIT
    GPRAJEK, AS
    ELECTRONIC ENGINEERING, 1980, 52 (634): : 29 - 29
  • [4] Efficient Ternary Galois Field Circuit Design Through Carbon Nanotube Technology
    Keshavarzian, Peiman
    Navi, Keivan
    Rafsanjani, Marjan Kuchaki
    2008 3RD INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGIES: FROM THEORY TO APPLICATIONS, VOLS 1-5, 2008, : 2501 - +
  • [5] A Novel Efficient Tri-State Boost Converter
    Han, Hua
    Tan, Ruya
    Yang, Jian
    Wang, Hui
    Ning, Sijie
    Shen, Mengtian
    2017 IEEE ELECTRICAL POWER AND ENERGY CONFERENCE (EPEC), 2017, : 312 - 317
  • [6] Tri-State Circuits A Circuit Model that Captures RAM
    Heath, David
    Kolesnikov, Vladimir
    Ostrovsky, Rafail
    ADVANCES IN CRYPTOLOGY - CRYPTO 2023, PT IV, 2023, 14084 : 128 - 160
  • [7] Design and evaluation of tri-state boost converter
    Viswanathan, K
    Oruganti, R
    Srinivasan, D
    PESC 04: 2004 IEEE 35TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, CONFERENCE PROCEEDINGS, 2004, : 4662 - 4668
  • [8] Efficient Carbon Nanotube Galois Field Circuit Design
    Keshavarziana, Peiman
    Navi, Keivan
    IEICE ELECTRONICS EXPRESS, 2009, 6 (09): : 546 - 552
  • [9] Design of Electro-optical Tri-state buffer and Tri-state inverter for high speed optical interconnect
    Pal, Amrindra
    Chauhan, Shashank
    Srivastava, Vivek Kumar
    Singh, Yadvendra
    Sharma, Sandeep
    INTEGRATED PHOTONICS PLATFORMS: FUNDAMENTAL RESEARCH, MANUFACTURING AND APPLICATIONS, 2020, 11364
  • [10] DESIGN AND EVALUATION OF A BIPOLAR TRI-STATE LOGIC FAMILY
    BULENT, A
    CRIST, SC
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (01) : 16 - 19