Theoretical Threshold Voltage of Two-Dimensional Semiconductor Field-Effect Transistors

被引：0
|
作者：
Zhang, Daoyu [1 ]
Zhao, Yinhao [1 ]
Yang, Minnan [2 ]
机构：
[1] School of Physics, Southeast University, Nanjing,211189, China
[2] Department of Physics, China Pharmaceutical University, Nanjing,211198, China
来源：
Journal of Physical Chemistry C | 2024年 / 128卷 / 47期
关键词：
D O I：
10.1021/acs.jpcc.4c06343
中图分类号：
学科分类号：
摘要：
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页码：20310 / 20315
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