A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

被引：32

作者：

Wang, Hsin-Kai ^{[1
]}

Wu, Sean ^{[2
]}

Chiang, Te-Kuang ^{[3
]}

Lee, Maw-Shung ^{[1
]}

机构：

[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, Kaohsiung 807, Taiwan

[2] Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung 829, Taiwan

[3] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 05期

关键词：

SOI MOSFET;

D O I：

10.1143/JJAP.51.054301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new analytical model for the surface potential and threshold voltage of triple-material surrounding-gate (TM-SGT) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The TM-SGT MOSFET forms a two-step potential in the channel and effectively reduces the SCEs and the variation of threshold voltage compared with those of dual-material surrounding-gate (DM-SGT) and triple-material double-gate (TM-DG) MOSFETs. TM-SGT MOSFETs thus have better performance than DM-SGT and TM-DG MOSFETs. (C) 2012 The Japan Society of Applied Physics

引用

页数：5

共 50 条

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