Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs

被引：0
|
作者：
Song, Jiaojiao [1 ,2 ]
Wang, Maojun [1 ,2 ]
Wei, Jin [1 ,2 ]
Fan, Zetao [1 ,2 ]
Zhang, Jiaxin [1 ,2 ]
Yang, Han [3 ]
Wang, Pengfei [1 ,2 ]
Xie, Bing [1 ,2 ]
Li, Cheng [4 ]
Yuan, Li [4 ]
Shen, Bo [3 ]
机构：
[1] Peking University, School of Integrated Circuits, Beijing,100871, China
[2] Beijing Advanced Innovation Center for Integrated Circuits, Beijing,100871, China
[3] Peking University, School of Physics, Beijing,100871, China
[4] Qingdao Cohenius Microelectronics Company Ltd., Qingdao,266101, China
来源：
IEEE Electron Device Letters | 2024年 / 45卷 / 10期
关键词：
D O I：
10.1109/LED.2024.3447236
中图分类号：
学科分类号：
摘要：
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页码：1728 / 1731
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