Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

被引：0
|
作者：
Nishiyama, Nobuhiko [1 ,2 ]
Mizutani, Akimasa [1 ,2 ]
Hatori, Nobuaki [1 ,3 ]
Arai, Masakazu [1 ,2 ]
Koyama, Fumio [1 ,2 ,4 ]
Iga, Kenichi [1 ]
机构：
[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
[2] Tokyo Institute of Technology, Tokyo, Japan
[3] Bell Laboratories, Lucent Technologies, Crawford Hill, NJ, United States
[4] AT and T Bell Labs, Crawford Hill, NJ, United States
来源：
IEEE Journal on Selected Topics in Quantum Electronics | / 5卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：530 / 536
相关论文
共 50 条
  • [31] Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy
    Li, CY
    Zhang, DH
    Yoon, SF
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 164 - 167
  • [32] Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy
    Higuchi, Y.
    Osaki, S.
    Kitada, T.
    Shimomura, S.
    Takasuka, Y.
    Ogura, M.
    Hiyamizu, S.
    SOLID-STATE ELECTRONICS, 2006, 50 (06) : 1137 - 1140
  • [33] Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
    Yang, Hung-Pin D.
    Chen, I-Liang
    Lee, Chen-Hong
    Chiou, Chih-Hong
    Lee, Tsin-Dong
    Hsu, I-Chen
    Lai, Fang-I
    Lin, Gray
    Kuo, Hao-Chung
    Chi, Jim Y.
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (20-24): : L509 - L511
  • [34] Vertical-cavity surface-emitting lasers with stable polarization grown on (411)A-oriented GaAs substrates
    Kaneko, Y
    Mars, DE
    Nakagawa, S
    Ichimura, Y
    Yamada, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (8A): : L864 - L866
  • [35] Vertical-cavity surface-emitting lasers with stable polarization grown on (411)A-oriented GaAs substrates
    Kaneko, Yasuhisa
    Mars, Dan E.
    Nakagawa, Shigeru
    Ichimura, Yoshikatsu
    Yamada, Norihide
    Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (8 A):
  • [36] InGaAs/GaAs vertical-cavity surface-emitting lasers with AlAs selective oxide layers
    Hatori, Nobuaki
    Mukaihara, Toshikazu
    Ohnoki, Noriyuki
    Mizutani, Akimasa
    Abe, Makoto
    Matsutani, Akihiro
    Koyama, Fumio
    Iga, Kenichi
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1998, 81 (01): : 13 - 20
  • [37] InGaAs vertical-cavity surface-emitting lasers buried in an amorphous GaAs passivation layer
    Yoo, BS
    Chu, HY
    Park, MS
    Park, HH
    Lee, EH
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 981 - 984
  • [38] Design and fabrication of InGaAs/GaAs quantum wires for vertical-cavity surface-emitting lasers
    Hatori, N
    Mukaihara, T
    Hayashi, Y
    Ohnoki, N
    Koyama, F
    Iga, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (03): : 1777 - 1778
  • [39] InGaAs/GaAs vertical-cavity surface-emitting lasers with AlAs selective oxide layers
    Hatori, N
    Mukaihara, T
    Ohnoki, N
    Mizutani, A
    Abe, M
    Matsutani, A
    Koyama, F
    Iga, K
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1998, 81 (01): : 13 - 20
  • [40] Design and fabrication of InGaAs/GaAs quantum wires for vertical-cavity surface-emitting lasers
    Tokyo Inst of Technology, Yokohama, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 3 (1777-1778):
12345