Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

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作者：
Nishiyama, Nobuhiko [1 ,2 ]
Mizutani, Akimasa [1 ,2 ]
Hatori, Nobuaki [1 ,3 ]
Arai, Masakazu [1 ,2 ]
Koyama, Fumio [1 ,2 ,4 ]
Iga, Kenichi [1 ]
机构：
[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
[2] Tokyo Institute of Technology, Tokyo, Japan
[3] Bell Laboratories, Lucent Technologies, Crawford Hill, NJ, United States
[4] AT and T Bell Labs, Crawford Hill, NJ, United States
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IEEE Journal on Selected Topics in Quantum Electronics | / 5卷 / 03期
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