Homoepitaxial layers of gallium nitride grown by metallorganic vapour phase epitaxy

被引：0
|
作者：
High Pressure Research Cent Polish, Acad of Sciences, Warsaw, Poland [1 ]
机构：
来源：
Semicond Sci Technol | / 2卷 / 240-243期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Electrical characterization of magnesium-doped gallium nitride grown by metalorganic vapor phase epitaxy
    Huang, JW
    Lu, H
    Cederberg, JG
    Bhat, I
    Kuech, TF
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 601 - 606
  • [42] Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy
    Sheu, Jinn-Kong
    Huang, Feng-Wen
    Liu, Yu-Hsuan
    Chen, P. C.
    Yeh, Yu-Hsiang
    Lee, Ming-Lun
    Lai, Wei-Chih
    APPLIED PHYSICS LETTERS, 2013, 102 (07)
  • [43] Acoustical and optical gallium nitride waveguides grown on Si(111) by metalorganic vapor phase epitaxy
    Schenk, HPD
    Feltin, E
    Vaille, M
    Gibart, P
    Kunze, R
    Schmidt, H
    Weihnacht, M
    Doghèche, E
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 537 - 541
  • [44] Carbon and hydrogen induced yellow luminescence in gallium nitride grown by halide vapor phase epitaxy
    Zhang, R
    Kuech, TF
    NITRIDE SEMICONDUCTORS, 1998, 482 : 709 - 714
  • [45] Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
    Pozina, G.
    Hemmingsson, C. G.
    Bergman, J. P.
    Trinh, D.
    Hultman, L.
    Monemar, B.
    SUPERLATTICES AND MICROSTRUCTURES, 2008, 43 (5-6) : 605 - 609
  • [46] Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy
    Theys, B
    Teukam, Z
    Jomard, F
    de Mierry, P
    Polyakov, AY
    Barbé, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (09) : L53 - L56
  • [47] Thick GaN layers grown on A-plane sapphire substrates by hydride vapour phase epitaxy
    Paskova, T
    Svedberg, EB
    Henry, A
    Ivanov, IG
    Yakimova, R
    Monemar, B
    PHYSICA SCRIPTA, 1999, T79 : 67 - 71
  • [48] Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
    Irem Simsek
    Gamze Yolcu
    MerveNur Koçak
    Kağan Pürlü
    Ismail Altuntas
    Ilkay Demir
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 25507 - 25515
  • [49] Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
    Simsek, Irem
    Yolcu, Gamze
    Kocak, MerveNur
    Purlu, Kagan
    Altuntas, Ismail
    Demir, Ilkay
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (20) : 25507 - 25515
  • [50] High-quality InAs homoepitaxial layers grown by molecular beam epitaxy
    Zhou, Hao
    Chen, Yiqiao
    Liu, Chang
    JOURNAL OF CRYSTAL GROWTH, 2025, 650
12345