Modeling of LDMOS and LIGBT structures at high temperatures

被引：0
|
作者：
Fatemizadeh, B. [1 ]
Silber, D. [1 ]
Fullmann, M. [1 ]
Serafin, J. [1 ]
机构：
[1] Univ of Bremen, Bremen, Germany
来源：
IEEE International Symposium on Power Semiconductor Devices & ICs | 1994年
关键词：
Semiconductor device structures;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：137 / 142
相关论文
共 50 条
  • [31] DIFFRACTION BY APERIODIC STRUCTURES AT HIGH-TEMPERATURES
    HOF, A
    JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1995, 28 (01): : 57 - 62
  • [32] Defect structures of metal oxides at high temperatures
    Paladino, Ombretta
    Chemical Engineering and Technology, 1993, 16 (05): : 341 - 346
  • [33] Modeling turn-off voltage rise in SOI LIGBT
    Napoli, Ettore
    Pathirana, Vasantha
    Udrea, Florin
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2006, 5 (2-3) : 181 - 186
  • [34] Modeling turn-off voltage rise in SOI LIGBT
    Ettore Napoli
    Vasantha Pathirana
    Florin Udrea
    Journal of Computational Electronics, 2006, 5 : 181 - 186
  • [35] Compact modeling of high-voltage LDMOS devices including quasi-saturation
    Aarts, ACT
    Kloosterman, WJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) : 897 - 902
  • [36] LDMOS modeling for analog and RF circuit design
    Canepari, A
    Bertrand, G
    Giry, A
    Minondo, M
    Blanchet, F
    Jaouen, H
    Reynard, B
    Jourdan, N
    Chante, JP
    PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, : 469 - 472
  • [37] NUMERICAL MODELING OF POLYSILICON TRANSISTOR STRUCTURES AT LOW-TEMPERATURES
    BUBENNIKOV, AN
    KARGASHIN, AY
    SADOVNIKOV, AD
    CHERNYAYEV, AV
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1991, 34 (09): : 50 - 54
  • [38] Effects of drain structures on the hot-carrier degradation of high-voltage LDMOS transistors
    Lee, DW
    Roh, TM
    Kim, J
    Koo, JG
    Nam, KS
    Kim, DY
    Park, HS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S542 - S545
  • [39] RF LDMOS characterization and its compact modeling
    Jang, JJ
    Tornblad, O
    Arnborg, T
    Chen, Q
    Banerjee, K
    Yu, ZP
    Dutton, RW
    2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 967 - 970
  • [40] NETWORK REPRESENTATIONS OF LIGBT STRUCTURES FOR CAD OF POWER INTEGRATED-CIRCUITS
    FOSSUM, JG
    MCDONALD, RJ
    SHIBIB, MA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 507 - 515
12345