Modeling of LDMOS and LIGBT structures at high temperatures

被引：0
|
作者：
Fatemizadeh, B. [1 ]
Silber, D. [1 ]
Fullmann, M. [1 ]
Serafin, J. [1 ]
机构：
[1] Univ of Bremen, Bremen, Germany
来源：
IEEE International Symposium on Power Semiconductor Devices & ICs | 1994年
关键词：
Semiconductor device structures;
D O I：
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学科分类号：
摘要：
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页码：137 / 142
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