ELECTROABSORPTION OF NICKEL-DOPED GALLIUM ARSENIDE.

被引：0
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作者：
Gutkin, A.A.
Nasledov, D.N.
Faradzhev, F.E.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 8卷 / 03期
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摘要：
SEMICONDUCTING GALLIUM COMPOUNDS
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页码：298 / 300
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