HIGH-FREQUENCY LIMIT OF THE GUNN EFFECT IN GALLIUM ARSENIDE.

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作者：
Kal'fa, A.A.
Poresh, S.B.
Tager, A.S.
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来源：
Soviet physics. Semiconductors | 1981年 / 15卷 / 12期
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摘要：
SEMICONDUCTING GALLIUM ARSENIDE
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页码：1343 / 1345
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