HIGH-FREQUENCY LIMIT OF THE GUNN EFFECT IN GALLIUM ARSENIDE.

被引：0
|
作者：
Kal'fa, A.A.
Poresh, S.B.
Tager, A.S.
机构：
来源：
Soviet physics. Semiconductors | 1981年 / 15卷 / 12期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码：1343 / 1345
相关论文
共 50 条
  • [41] HIGH-FREQUENCY GALLIUM-ARSENIDE 4-QUADRANT ANALOG MULTIPLIER
    TOUMAZOU, C
    HAIGH, DG
    FOPMA, JM
    [J]. ELECTRONICS LETTERS, 1990, 26 (20) : 1650 - 1652
  • [42] LASER ANNEALING OF POINT DEFECTS IN SILICON AND GALLIUM ARSENIDE.
    Kachurin, G.A.
    Nidaev, E.V.
    [J]. Soviet physics. Semiconductors, 1980, 14 (03): : 251 - 252
  • [43] PHOTON TRANSFER OF EXCITATION OF NONEQUILIBRIUM CARRIERS IN GALLIUM ARSENIDE.
    Epifanov, M.S.
    Galkin, G.N.
    Bobrova, E.A.
    Vavilov, V.S.
    Sabanova, L.D.
    [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (05): : 526 - 529
  • [44] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM ARSENIDE.
    Brodovoi, V.A.
    Derikot, N.Z.
    [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 958 - 959
  • [45] PROPERTIES OF IRON-DOPED SEMIINSULATING GALLIUM ARSENIDE.
    Fistul', V.I.
    Pervova, L.Ya.
    Omel'yanovskii, E.M.
    Rashevskaya, E.P.
    Solov'ev, N.N.
    Pelevin, O.V.
    [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 311 - 316
  • [46] INTERACTION OF RADIATION DEFECTS WITH COPPER ATOMS IN GALLIUM ARSENIDE.
    Vovnenko, V.I.
    Glinchuk, K.D.
    Lukat, K.
    [J]. Soviet physics. Semiconductors, 1982, 16 (08): : 936 - 937
  • [47] INFLUENCE OF IMPURITIES ON THE ENERGY OF STACKING FAULTS IN GALLIUM ARSENIDE.
    Astakhov, V.M.
    Vadil'eva, L.F.
    Sidorov, Yu.G.
    Stenin, S.I.
    [J]. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1980, 22 (02): : 279 - 282
  • [48] HIGH-SPEED HIGH-FREQUENCY GALLIUM-ARSENIDE TRANSISTORS FOR INTEGRATED-CIRCUITS
    EASTMAN, LF
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C467 - C467
  • [49] ANALYSIS OF MASS TRANSPORT DURING ELECTROLIQUID EPITAXY OF GALLIUM ARSENIDE.
    Nikishin, S.A.
    [J]. Soviet physics. Technical physics, 1983, 28 (03): : 334 - 338
  • [50] INFLUENCE OF DEEP LEVELS ON THE SPACE-CHARGE CAPACITANCE AND THE FIELD EFFECT IN GALLIUM ARSENIDE.
    Dmitruk, N.L.
    Tereshchenko, A.K.
    Maeva, O.I.
    Lyashenko, V.I.
    Raskevich, A.M.
    [J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (04): : 469 - 473
12345