IMPROVED SILICON SOURCE FOR ULTRA-HIGH VACUUM DEPOSITION.

被引：0
|
作者：
Racette, G.W.
Rutecki, D.J.
机构：
来源：
Insulation, circuits | 1981年 / 27卷 / 09期
关键词：
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A silicon source for ultra-high vacuum deposition, reportedly incorporates several improvements over conventional silicon sources. Two independent silicon filaments represent the major improvement. Not only is the deposition faster and more uniform upon large substrates, but p and n types of silicon may be deposited simultaneously.
引用
收藏
页码：40 / 41
相关论文
共 50 条
  • [41] CONTAMINATION IN ULTRA-HIGH VACUUM PLANT
    HOLLAND, L
    PRIESTLAND, C
    LAURENSON, L
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (04): : 377 - +
  • [42] NEW ULTRA-HIGH VACUUM VALVE
    PATY, L
    SCHURER, P
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (08): : 654 - 655
  • [43] ULTRA-HIGH VACUUM IONIZATION MANOMETER
    LANDER, JJ
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1950, 21 (07): : 672 - 673
  • [44] METAL ADHESION IN ULTRA-HIGH VACUUM
    DESALOS, Y
    PAULMIER, D
    JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1969, 66 (05) : 940 - &
  • [45] A DEMOUNTABLE ULTRA-HIGH VACUUM JOINT
    PATTEE, HH
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1954, 25 (11): : 1132 - 1133
  • [46] ULTRA-HIGH VACUUM AND PRECISION IN MEASUREMENT
    Cook, Brandoch
    Lab Manager, 2019, 14 (08): : 52 - 53
  • [47] High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition
    Chen, CC
    Huang, WT
    Liu, ZH
    Wang, JL
    Xiong, XY
    Shan, YL
    Zhang, W
    Zhu, J
    Tsien, PH
    METALS AND MATERIALS INTERNATIONAL, 2004, 10 (03) : 281 - 284
  • [48] Electrical characterization of ultra-thin oxides grown on silicon surfaces cleaned in ultra-high vacuum
    Petersen, CL
    Grey, F
    SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR SURFACE PREPARATION, 1997, 477 : 293 - 298
  • [49] Boron-δ doped Si grown by ultra-high vacuum chemical vapor deposition
    Chien, PW
    Wu, SL
    Lee, SC
    Chang, SJ
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 77 (02) : 426 - 429
  • [50] Growing graphene on polycrystalline copper foils by ultra-high vacuum chemical vapor deposition
    Mueller, Niclas S.
    Morfa, Anthony J.
    Abou-Ras, Daniel
    Oddone, Valerio
    Ciuk, Tymoteusz
    Giersig, Michael
    CARBON, 2014, 78 : 347 - 355
12345