IMPROVED SILICON SOURCE FOR ULTRA-HIGH VACUUM DEPOSITION.

被引：0
|
作者：
Racette, G.W.
Rutecki, D.J.
机构：
来源：
Insulation, circuits | 1981年 / 27卷 / 09期
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D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A silicon source for ultra-high vacuum deposition, reportedly incorporates several improvements over conventional silicon sources. Two independent silicon filaments represent the major improvement. Not only is the deposition faster and more uniform upon large substrates, but p and n types of silicon may be deposited simultaneously.
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页码：40 / 41
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