Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy

被引：0
|
作者：
Park, Y.S. [1 ]
Lee, H.S. [1 ]
Na, J.H. [1 ]
Kim, H.J. [1 ]
Si, Sang Man [1 ]
Kim, Hwa-Mok [1 ]
Kang, T.W. [1 ]
Oh, Jae Eung [2 ]
机构：
[1] Quan.-Funct. Semiconduct. Res. Ctr., Dongguk University, Seoul 100-715, Korea, Republic of
[2] Sch. of Elec./Computer Engineering, Hanyang University, Ansan 425-791, Korea, Republic of
来源：
Journal of Applied Physics | 2003年 / 94卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：800 / 802
相关论文
共 50 条
  • [31] Structural properties of GaN films grown on sapphire by molecular beam epitaxy
    Appl Phys Lett, 8 (1141):
  • [32] Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
    Dimitrakopulos, G. P.
    Komninou, Ph.
    Kehagias, Th.
    Sahonta, S. -L.
    Kioseoglou, J.
    Vouroutzis, N.
    Hausler, I.
    Neumann, W.
    Iliopoulos, E.
    Georgakilas, A.
    Karakostas, Th.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (11): : 2569 - 2572
  • [33] Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
    Cherns, D.
    Meshi, L.
    Griffiths, I.
    Khongphetsak, S.
    Novikov, S. V.
    Farley, N.
    Campion, R. P.
    Foxon, C. T.
    APPLIED PHYSICS LETTERS, 2008, 92 (12)
  • [34] Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy
    Kushvaha, Sunil Singh
    Kumar, M. Senthil
    Maheshwari, Monisha
    Shukla, Ajay Kumar
    Pal, Prabir
    Maurya, K. K.
    MATERIALS RESEARCH EXPRESS, 2014, 1 (03)
  • [35] Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy
    Mei, F.
    Fu, Q. M.
    Peng, T.
    Liu, C.
    Peng, M. Z.
    Zhou, J. M.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
  • [36] Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy
    Chang, Chiao-Yun
    Huang, Huei-Min
    Lan, Yu-Pin
    Lu, Tien-Chang
    Tu, Li-Wei
    Hsieh, Wen-Feng
    CRYSTAL GROWTH & DESIGN, 2013, 13 (07) : 3098 - 3102
  • [37] Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy
    Cervantes-Contreras, M
    Quezada-Maya, CA
    López-López, M
    de la Cruz, GG
    Tamura, M
    Yodo, T
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 415 - 420
  • [38] Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE
    Shen, XQ
    Kawakami, Y
    Okumura, H
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 231 - 234
  • [39] Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy
    Jana, Sanjay Kr
    Ghosh, Saptarsi
    Dinara, Syed Mukulika
    Mahata, Mihir
    Das, Soumen
    Biswas, Dhrubes
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (04):
  • [40] Structural study of GaN(As,P) layers grown on (0001) GaN by gas source molecular beam epitaxy
    Seong, TY
    Bae, IT
    Zhao, Y
    Tu, CW
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G3.11
12345