Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy

被引：0
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作者：
Park, Y.S. [1 ]
Lee, H.S. [1 ]
Na, J.H. [1 ]
Kim, H.J. [1 ]
Si, Sang Man [1 ]
Kim, Hwa-Mok [1 ]
Kang, T.W. [1 ]
Oh, Jae Eung [2 ]
机构：
[1] Quan.-Funct. Semiconduct. Res. Ctr., Dongguk University, Seoul 100-715, Korea, Republic of
[2] Sch. of Elec./Computer Engineering, Hanyang University, Ansan 425-791, Korea, Republic of
来源：
Journal of Applied Physics | 2003年 / 94卷 / 01期
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(Edited Abstract)
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页码：800 / 802
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