GROWTH AND DOPING CHARACTERISTICS OF AlxGa1 - xAs GROWN BY LPE AT 780 degree C.

被引：0
|
作者：
Yu, Jinzhong [1 ]
Iwai, S. [1 ]
Aoyagi, Y. [1 ]
机构：
[1] Acad Sinica, Semiconductors Inst,, Beijing, China, Acad Sinica, Semiconductors Inst, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1985年 / 6卷 / 02期
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摘要：
SEMICONDUCTING ALUMINUM COMPOUNDS
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页码：123 / 127
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