CHARACTERISTICS OF HIGH TEMPERATURE ANNEALING ON MODULATION DOPED GaAs/AlxGa1 - xAs HETEROSTRUCTURES.

被引：0
|
作者：
Xin, Shangheng [1 ]
机构：
[1] Shanghai Jiaotong Univ, China, Shanghai Jiaotong Univ, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DEVICES
引用
收藏
页码：509 / 515
相关论文
共 50 条
  • [1] TRANSIENT ANNEALING OF MODULATION-DOPED GaAs/AlxGa1 - xAs HETEROSTRUCTURES.
    Henderson, T.
    Pearah, P.
    Morkoc, H.
    Nilsson, B.
    Electronics Letters, 1984, 20 (04) : 371 - 373
  • [2] MOVPE GROWN AlxGa1 - xAs/GaAs HETEROSTRUCTURES.
    Roberts, J.S.
    Chemtronics, 1987, 2 (02): : 78 - 82
  • [3] SPECTRAL RESPONSE OF PERSISTENT PHOTOCONDUCTIVITY IN MODULATION-DOPED AlxGa1 - xAs/GaAs HETEROSTRUCTURES.
    Dong Mouqun
    Ge Weikun
    Jiang Pihuan
    Sun Dianzhao
    Cheng Zonggui
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1988, 9 (01): : 92 - 95
  • [4] Complex dynamical behaviors in modulation-doped GaAs/AlxGa1 −xAs heterostructures
    Guohui Li
    Shiping Zhou
    Deming Xu
    Science in China Series : Information Sciences, 2001, 44 (6): : 412 - 418
  • [5] FUNDAMENTAL STUDIES AND DEVICE APPLICATION OF delta -DOPING IN GaAs LAYERS AND IN AlxGa1 - xAs/GaAs HETEROSTRUCTURES.
    Max-Planck-Inst Fuer, Festkoerperforschung, Stuttgart,, West Ger, Max-Planck-Inst Fuer Festkoerperforschung, Stuttgart, West Ger
    Appl Phys A, 1988, 3 (233-244):
  • [6] TRANSIENT ANNEALING OF MODULATION-DOPED GAAS/ALXGA1-XAS HETEROSTRUCTURES
    HENDERSON, T
    PEARAH, P
    MORKOC, H
    NILSSON, B
    ELECTRONICS LETTERS, 1984, 20 (09) : 371 - 373
  • [7] Structural characterization of interfaces in the AlxGa1−xAs/GaAs/AlxGa1−xAs heterostructures by high-resolution X-ray reflectometry and diffractometry
    A. A. Lomov
    A. G. Sutyrin
    D. Yu. Prokhorov
    G. B. Galiev
    Yu. V. Khabarov
    M. A. Chuev
    R. M. Imamov
    Crystallography Reports, 2005, 50 : 739 - 750
  • [8] RAPID THERMAL ANNEALING OF MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR DEVICE APPLICATIONS
    PEARAH, P
    HENDERSON, T
    KLEM, J
    MORKOC, H
    NILSSON, B
    WU, O
    SWANSON, AW
    CHEN, DR
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1851 - 1855
  • [9] EXPERIMENTAL AND THEORETICAL ELECTRON MOBILITY OF MODULATION DOPED AlxGa1 - xAs/GaAs HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY.
    Drummond, T.J.
    Morkoc, H.
    Hess, K.
    Cho, A.Y.
    1600, (52):
  • [10] Origin of current instabilities in GaAs/AlxGa1-xAs heterostructures. Avalanche ionization in the AlxGa1-xAs layer
    1600, (73):
12345