Alloy dependence of the carrier concentration and negative persistant photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb single quantum wells

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作者：
Bardeleben, H.J.von [1 ]
Manasreh, M.O. [1 ]
Stutz, C.E. [1 ]
机构：
[1] Universites Paris, Paris, France
来源：
Materials Science Forum | 1994年 / 143-4卷 / pt 1期
关键词：
Band structure - Charge carriers - Composition effects - Electric excitation - Electron resonance - Electron transitions - Magnetic properties - Metalloids - Paramagnetic resonance - Photoconductivity - Semiconducting gallium compounds - Semiconducting indium compounds;
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摘要：
The magnetoconductivity of the two dimensional electron gas (2-DEG) in undoped single quantum wells Ga1-xAlxSb/InAs/Ga1-xAlxSb of various alloy compositions 0.1&lex&le1.0 was studied by the electron paramagnetic resonance technique. The carrier concentrations for semi-metallic (x<0.2) and non semi-metallic (x≥0.6) structures were determined at 4 K. The independence of the carrier concentration on the band structure off-sets (semi-metallic / semi-insulating transition) demonstrates the extrinsic origin of the 2-DEG. The 2-DEG concentration is modified by low temperature optical excitation: both negative and positive persistent variations were observed depending on the excitation wavelength and the alloy composition. No NPPC is observed in single quantum wells with x = 0.1 barrier composition.
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页码：611 / 616
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