NORMAL-INCIDENCE ELECTROABSORPTION IN GA1-XALXSB/ALSB L-VALLEY QUANTUM-WELLS FOR 3-5 MU-M OPTICAL MODULATION

被引：6

作者：

XIE, H ^{[1
]}

WANG, WI ^{[1
]}

MEYER, JR ^{[1
]}

HOFFMAN, CA ^{[1
]}

BARTOLI, FJ ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.354630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Theoretical investigations are presented of the electric-field dependence of normal-incidence interconduction subband absorption in Ga1-xAlxSb/AlSb L-valley quantum wells. Under an applied electric field of 50 kV/cm, a blue shift of the absorption peak from 4.94 to 4.82 mum was found in a Ga0.7Al0.3Sb/AlSb structure with well width of 25 angstrom. The ability to absorb normally incident light and to achieve significant Stark shifts with bias makes the Ga1-xAlxSb/AlSb L-valley system an attractive choice for the 3-5 mum vertical optical modulators.

引用

页码：2810 / 2812

页数：3

共 4 条

[1] NORMAL INCIDENCE SECOND-HARMONIC GENERATION IN L-VALLEY ALSB/GASB/GA1-XALXSB/ALSB STEPPED QUANTUM-WELLS
XIE, H
WANG, WI
MEYER, JR
RAMMOHAN, LR
APPLIED PHYSICS LETTERS, 1994, 65 (16) : 2048 - 2050
[2] Normal incidence second-harmonic generation in L-valley AlSb/GaSb/Ga1-xAlxSb/AlSb stepped quantum wells - Comments
Zaluzny, M
Bondarenko, V
APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1872 - 1872
[3] Normal incidence second-harmonic generation in L-valley AlSb/GaSb/Ga1-xAlxSb/AlSb stepped quantum wells - Response
RamMohan, LR
Meyer, JR
Xie, H
Wang, WI
APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1873 - 1873
[4] PHOTOVOLTAIC INTERSUBBAND DETECTORS FOR 3-5 MU-M USING GAAS QUANTUM-WELLS SANDWICHED BETWEEN ALAS TUNNEL BARRIERS
SCHNEIDER, H
KOIDL, P
FUCHS, F
DISCHLER, B
SCHWARZ, K
RALSTON, JD
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) : C120 - C123

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