Charge-carrier collection by superconducting transition-edge sensors deposited on silicon

被引：0
|
作者：
Dougherty, B.L. [1 ]
Cabrera, B. [1 ]
Lee, A.T. [1 ]
Penn, M.J. [1 ]
Young, B.A. [1 ]
Pronko, J.G. [1 ]
机构：
[1] Stanford Univ, Stanford, United States
来源：
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1993年 / A333卷 / 2-3期
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页码：464 / 468
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