Charge-carrier collection by superconducting transition-edge sensors deposited on silicon

被引：0
|
作者：
Dougherty, B.L. [1 ]
Cabrera, B. [1 ]
Lee, A.T. [1 ]
Penn, M.J. [1 ]
Young, B.A. [1 ]
Pronko, J.G. [1 ]
机构：
[1] Stanford Univ, Stanford, United States
来源：
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1993年 / A333卷 / 2-3期
关键词：
7;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：464 / 468
相关论文
共 50 条
  • [21] An investigation of excess noise in transition-edge sensors on a solid silicon substrate
    Crowder, SG
    Lindeman, MA
    Anderson, MB
    Bandler, SR
    Bilgri, N
    Bruijn, MP
    Chervenak, J
    Figueroa-Feliciano, E
    Finkbeiner, F
    Germeau, A
    Hoevers, HFC
    Iyomoto, N
    Kelly, R
    Kilbourne, CA
    Lai, T
    Man, J
    McCammon, D
    Nelms, KL
    Porter, FS
    Rocks, L
    Saab, T
    Sadleir, J
    Vidugiris, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 559 (02): : 721 - 723
  • [22] Multitone large-signal analysis of superconducting transition-edge sensors for astronomy
    Rostem, K.
    Withington, S.
    Goldie, D. J.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (03)
  • [23] A frequency-domain SQUID multiplexer for arrays of transition-edge superconducting sensors
    Lanting, TM
    Cho, HM
    Clarke, J
    Dobbs, M
    Lee, AT
    Richards, PL
    Smith, AD
    Spieler, HG
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2003, 13 (02) : 626 - 629
  • [24] SQUID multiplexers for transition-edge sensors
    Irwin, KD
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2002, 368 (1-4): : 203 - 210
  • [25] Energy collection efficiency of tungsten transition-edge sensors in the near-infrared
    Lita, A. E.
    Miller, A. J.
    Nam, S.
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2008, 151 (1-2) : 125 - 130
  • [26] Energy Collection Efficiency of Tungsten Transition-Edge Sensors in the Near-Infrared
    A. E. Lita
    A. J. Miller
    S. Nam
    Journal of Low Temperature Physics, 2008, 151 : 125 - 130
  • [27] The determination of charge-carrier lifetime in silicon
    Klein, D.
    Wuensch, F.
    Kunst, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (09): : 1865 - 1876
  • [28] Tuning of Critical Temperature and Aging Effect of Ti Films For Superconducting Transition-Edge Sensors
    Zhang, W.
    Wang, Z.
    Li, P. Z.
    Zhong, J. Q.
    Ma, Q. X.
    Feng, Z. F.
    Zhou, K. M.
    Miao, W.
    Ren, Y.
    Yao, Q. J.
    Li, J.
    Shi, S. C.
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2024, 214 (3-4) : 106 - 112
  • [29] Time-division superconducting quantum interference device multiplexer for transition-edge sensors
    de Korte, PAJ
    Beyer, J
    Deiker, S
    Hilton, GC
    Irwin, KD
    MacIntosh, M
    Nam, SW
    Reintsema, CD
    Vale, LR
    Huber, ME
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (08): : 3807 - 3815
  • [30] Dark counts in optical superconducting transition-edge sensors for rare-event searches
    Manenti, Laura
    Pepe, Carlo
    Sarnoff, Isaac
    Ibrayev, Tengiz
    Oikonomou, Panagiotis
    Knyazev, Artem
    Monticone, Eugenio
    Garrone, Hobey
    Alder, Fiona
    Fawwaz, Osama
    Millar, Alexander J.
    Mora, Knut Dundas
    Shams, Hamad
    Arneodo, Francesco
    Rajteri, Mauro
    PHYSICAL REVIEW APPLIED, 2024, 22 (02):
12345