Active MOS Memory with Pumping of Charge.

被引：0

作者：

Owczarek, Artur

Guryn, Roman

机构：

来源：

Elektronika | 1976年 / 17卷 / 01期

关键词：

TRANSISTORS; FIELD EFFECT;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The theory of the charge pumping effect in MOS transistors is considered. A memory cell with charge pumping devices is analyzed. The principles of operation of the read-write cell made on charge pumping devices are discussed.

引用

页码：35 / 39

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