Active MOS Memory with Pumping of Charge.

被引：0
|
作者：
Owczarek, Artur
Guryn, Roman
机构：
来源：
Elektronika | 1976年 / 17卷 / 01期
关键词：
TRANSISTORS; FIELD EFFECT;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The theory of the charge pumping effect in MOS transistors is considered. A memory cell with charge pumping devices is analyzed. The principles of operation of the read-write cell made on charge pumping devices are discussed.
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页码：35 / 39
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