共 50 条
- [2] STUDY ON CHARGE-PUMPING EFFECT IN MOS TRANSISTORS [J]. ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1971, 22 (04): : 785 - &
- [3] CHARGE PUMPING MEMORY WITH SOS-MOS TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 155 - 160
- [4] Detection and Characterization of Single MOS Interface Traps by the Charge Pumping Method [J]. 2016 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2016, : 22 - 23
- [5] CHARACTERIZATION OF INTERFACE STATES IN SUBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES [J]. JOURNAL DE PHYSIQUE III, 1993, 3 (10): : 1947 - 1961
- [7] BROADENED STUDY ON DIFFERENTIAL CHARGE PUMPING EFFECT IN MOS-TRANSISTORS [J]. HELVETICA PHYSICA ACTA, 1971, 44 (07): : 866 - &
- [10] Defect characterization in floating body transistors using a single pulse charge pumping method [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2021, 39 (05):