Charge pumping method for the characterization of MOS transistors

被引：0
|
作者：
机构：
来源：
Elektronika | / 4卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Novel charge pumping method without-using MOS transistor for SOI wafer inspection
    Takami, T
    Yoshida, H
    Uchihashi, T
    Kishino, S
    ICMTS 2002:PROCEEDINGS OF THE 2002 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2002, : 183 - 187
  • [42] A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices
    祝鹏
    潘立阳
    古海明
    谯凤英
    邓宁
    许军
    Journal of Semiconductors, 2010, (10) : 52 - 56
  • [43] A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices
    Zhu Peng
    Pan Liyang
    Gu Haiming
    Qiao Fengying
    Deng Ning
    Xu Jun
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (10)
  • [44] Extraction of the Si-SiO2 interface trap layer parameters in MOS transistors using a new charge pumping analysis
    Maneglia, Y
    Bauza, D
    ICMTS 1998: PROCEEDINGS OF THE 1998 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1998, : 201 - 205
  • [45] In-depth exploration of Si-SiO[sb 2] interface traps in MOS transistors using the charge pumping technique
    IEEE Trans Electron Devices, 12 (2262-2266):
  • [46] ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS-TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE
    BELLENS, R
    HEREMANS, P
    GROESENEKEN, G
    MAES, HE
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 651 - 655
  • [47] CHARGE PUMPING AND LOW-FREQUENCY NOISE IN MOS STRUCTURES
    LEUENBERGER, F
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02): : 545 - +
  • [48] Applications of the Thermal Step Method to the Characterization of Electric Charge in MOS Components
    Fruchier, O.
    Notingher, P., Jr.
    Agnel, S.
    Toureille, A.
    Forest, F.
    Cunningham, S.
    Rousset, B.
    Sanchez, J. -L.
    CONFERENCE RECORD OF THE 2007 IEEE INDUSTRY APPLICATIONS CONFERENCE FORTY-SECOND IAS ANNUAL MEETING, VOLS. 1-5, 2007, : 444 - +
  • [49] A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors
    Savic, Z
    Radjenovic, B
    MICROELECTRONICS RELIABILITY, 1997, 37 (07) : 1147 - 1150
  • [50] Charge pumping analysis of radiation effects in LOCOS parasitic transistors
    Flament, O
    Autran, JL
    Paillet, P
    Roche, P
    Faynot, O
    Truche, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) : 1930 - 1938
12345