Interface structure of GaN on sapphire (0 0 0 1) studied by transmission electron microscope

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作者：
Onitsuka, Tsuyoshi [1 ]
Maruyama, Takahiro [1 ]
Akimoto, Katsuhiro [1 ]
Bando, Yoshio [1 ]
机构：
[1] Univ of Tsukuba, Ibaraki, Japan
来源：
Journal of Crystal Growth | / 189-190卷
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页码：295 / 300
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