Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers

被引：0

作者：

Liu, Zhengxin ^{[1
]}

Suzuki, Yasuhito ^{[1
]}

Osamura, Masato ^{[1
]}

Ootsuka, Teruhisa ^{[1
]}

Mise, Takahiro ^{[1
]}

Kuroda, Ryo ^{[2
,4
]}

Tanoue, Hisao ^{[2
]}

Makita, Yunosuke ^{[2
]}

Wang, Shinan ^{[3
]}

Fukuzawa, Yasuhiro ^{[3
]}

Otogawa, Naotaka ^{[3
]}

Nakayama, Yasuhiko ^{[3
]}

机构：

[1] System Engineers' Company, Limited, Yamato, Kanagawa 242-0001, Japan

[2] Natl. Inst. Adv. Indust. Sci./T., AIST Tsukuba Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan

[3] Japan Sci./Technology Corporation, AIST Tsukuba West, Onogawa 16-1, Tsukuba, Ibaraki 305-8569, Japan

[4] Nippon Institute of Technology, Saitama 345-8501, Japan

来源：

Journal of Applied Physics | 2004年 / 95卷 / 08期

关键词：

Annealing - Defects - Diffusion - Epitaxial growth - Grain boundaries - High temperature effects - Iron compounds - Kinetic energy - Leakage currents - Light emitting diodes - Multilayers - Raman scattering - Reduction - Scanning electron microscopy - Sputtering - Transmission electron microscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

High-quality β-FeSi2 films were fabricated by the facing-target sputtering (FTS) method. It was found that an epitaxial thin β-FeSi2 template buffer layer performed on Si substrate was essential for the epitaxial growth of thick β-FeSi2 film. The mechanism for reducing Fe diffusion into Si was also discussed with respect to the dependence of the β-FeSi2 epitaxial growth temperature on the thickness, the stability of the compound and features of Fe diffusion in Si. The results indicate that a template layer for the growth of thick β-FeSi2 layers is useful for obtaining β-FeSi 2/Si heterojunctions for photosensor and thin film solar cell applications.

引用

页码：4019 / 4024

共 50 条

[41] Epitaxially growth Of β-FeSi2 thin films on Si(100) substrates from ε-FeSi targets with ArF excimer laser deposition
Tode, M.
Takigawa, Y.
Ohmukai, M.
Kurosawa, K.
Muroya, M.
COLA'05: 8TH INTERNATIONAL CONFERENCE ON LASER ABLATION, 2007, 59 : 376 - +
[42] Epitaxial growth of thin Ag and Au films on Si(111) using thin copper silicide buffer layers
Pedersen, K
Morgen, P
Pedersen, TG
Li, ZS
Hoffmann, SV
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (04): : 1431 - 1435
[43] Surface modification of Si(111) substrate by iron ion implantation:: Growth of a thin β-FeSi2 layer
Ayache, R
Bouabellou, A
Eichhorn, F
Richter, E
Mücklich, A
REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (03):
[44] Study on iron dissilicide (β-FeSi2) epitaxial thin films on Si(111) substrate by mass-analyzed low-energy ion beam epitaxy
Li, Hui
Ma, Hui
Ding, Weiqing
Qin, Fuquang
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1997, 18 (04): : 264 - 268
[45] OPTICAL AND ELECTRICAL CHARACTERIZATION OF BETA-FESI2 EPITAXIAL THIN-FILMS ON SILICON SUBSTRATES
LEFKI, K
MURET, P
CHERIEF, N
CINTI, RC
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 352 - 357
[46] EPITAXIAL CEO2 FILMS AS BUFFER LAYERS FOR HIGH-TEMPERATURE SUPERCONDUCTING THIN-FILMS
WU, XD
DYE, RC
MUENCHAUSEN, RE
FOLTYN, SR
MALEY, M
ROLLETT, AD
GARCIA, AR
NOGAR, NS
APPLIED PHYSICS LETTERS, 1991, 58 (19) : 2165 - 2167
[47] High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target
Xu, S. C.
Yang, C.
Liu, M.
Jiang, S. Z.
Ma, Y. Y.
Chen, C. S.
Gao, X. G.
Sun, Z. C.
Hu, B.
Wang, C. C.
Man, B. Y.
MATERIALS CHEMISTRY AND PHYSICS, 2012, 135 (2-3) : 991 - 997
[48] Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate
Liu, Zhengxin
Osamura, Masato
Ootsuka, Teruhisa
Kuroda, Ryo
Fukuzawa, Yasuhiro
Otogawa, Naotaka
Nakayama, Yasuhiko
Makita, Yunosuke
Tanoue, Hisao
JOURNAL OF CRYSTAL GROWTH, 2007, 307 (01) : 82 - 86
[49] Nanostructuring of Fe films by oblique incidence deposition on a FeSi2 template onto Si(111): Growth, morphology, structure and faceting
Bubendorff, J. L.
Garreau, G.
Zabrocki, S.
Berling, D.
Jaafar, R.
Hajjar, S.
Mehdaoui, A.
Pirri, C.
SURFACE SCIENCE, 2009, 603 (02) : 373 - 379
[50] Epitaxial growth of ultra-thin NbN films on AlxGa1-xN buffer-layers
Krause, S.
Meledin, D.
Desmaris, V.
Pavolotsky, A.
Belitsky, V.
Rudzinski, M.
Pippel, E.
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2014, 27 (06):

← 1 2 3 4 5 →