Surface modification of Si(111) substrate by iron ion implantation:: Growth of a thin β-FeSi2 layer

被引：0
|
作者：
Ayache, R [1 ]
Bouabellou, A
Eichhorn, F
Richter, E
Mücklich, A
机构：
[1] Univ Batna, Dept Pharm, Batna 05000, Algeria
[2] Univ Mentouri Constantine, Lab Couches Minces & Interfaces, Meerut 250001, Uttar Pradesh, India
[3] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2006年 / 77卷 / 03期
关键词：
D O I：
10.1063/1.2163886
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The processes in the synthesis of a thin layer of the semiconducting iron silicide (beta-FeSi2) on the surface of a single-crystal Si(111) substrate by implantation of 195 keV Fe ions with a dose of 8 X 10(17) cm(-2) are investigated. Using Rutherford backscattering spectrometry, x-ray diffraction and cross-sectional transmission electron microscopy, the structure and the phase composition of the synthesized layers are studied. The infrared transmittance spectra show the absorption at 310 cm(-1) as an indication of the initial nucleation of beta-FeSi2 precipitates during the implantation of iron into silicon substrate. (c) 2006 American Institute of Physics.
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