Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)

被引：0
|
作者：
Chalker, Paul R. [1 ]
Joyce, Tim B. [1 ]
Farrell, Trevor [1 ]
Johnston, Colin [2 ]
Crossley, Alison [2 ]
Eccles, Julie [2 ]
机构：
[1] Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, United Kingdom
[2] AEA Technology PLC., Harwell Laboratory, Didcot, Oxfordshire, OX11 0RA, United Kingdom
来源：
Thin Solid Films | 1999年 / 343卷
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页码：575 / 578
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