THE HOMOEPITAXIAL GROWTH OF ON-AXIS GAAS(111)A, (111)B AND (201) COMPARED WITH GAAS(100) - DOPING AND GROWTH TEMPERATURE STUDIES

被引：17
|
作者：
WOOLF, DA
WILLIAMS, JP
WESTWOOD, DI
SOBIESIERSKI, Z
AUBREY, JE
WILLIAMS, RH
机构：
[1] Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff, CF2 3YB Wales
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90759-P
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Si-doping and variable growth temperature studies have been performed in the on-axis homoepitaxial GaAs(111)A, (111)B and (201) materials systems. These studies are compared with the already extensively characterized GaAs(100) orientation. It was demonstrated that the Si-doped n-type GaAs(111)B and (201) could be grown across the mid- 10(14) to 10(18) cm-3 range, whereas the Si-doped GaAs(111)A was p-type and could be doped from congruent-to 2 X 10(15) to = 5 X 10(17) cm-3 . The growth temperature studies revealed similar conducting/non-conducting transitions in the GaAs(111)A, (111)B and (201) specimens as observed for GaAs(100).
引用
收藏
页码：913 / 917
页数：5
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