Photoconductivity in bulk and epitaxial GaAs:V

被引：0

作者：

Gladkov, P.S. ^{[1
]}

Ozanyan, K.B. ^{[1
]}

机构：

[1] Sofia Univ, Bulgaria

来源：

| 1600年 / 108期

关键词：

D O I：

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摘要：

Semiconducting Gallium Arsenide

引用

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[21] INFLUENCE OF ANODIC-OXIDATION ON THE PHOTOCONDUCTIVITY AND SURFACE-STATE OF EPITAXIAL GAAS
BEDNYI, BI
SHILOVA, MV
TIKHOV, SV
KARPOVICH, IA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (11): : 1268 - 1270
[22] CHEMICAL ETCHING OF STRUCTURAL DEFECTS IN EPITAXIAL GAAS1-XPX AND BULK GAAS
ROSIN, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : K5 - &
[23] PHOTOCONDUCTIVITY OF EPITAXIAL PBTE
ZANINI, M
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 311 - 311
[24] FAR-INFRARED DONOR ABSORPTION AND PHOTOCONDUCTIVITY IN EPITAXIAL N-TYPE GAAS
SUMMERS, CJ
DINGLE, R
HILL, DE
PHYSICAL REVIEW B, 1970, 1 (04): : 1603 - &
[25] ILLUMINATION-DOSE DEPENDENCE OF PERSISTENT PHOTOCONDUCTIVITY OF N-GAAS EPITAXIAL LAYERS
THEODOROU, DE
QUEISSER, HJ
APPLIED PHYSICS, 1980, 23 (02): : 121 - 126
[26] Investigation of free excitons in undoped MOCVD GaAs epitaxial layer of different thicknesses by photoconductivity
Wu, Fengmei
Shi, Yi
Parenteau, Martin
Jorio, Anouar
Carlone, Cosmo
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1995, 14 (04): : 263 - 270
[27] 2-LIGHT-SOURCE EXTRINSIC PHOTOCONDUCTIVITY OF GAAS-V
PASTRNAK, J
KAREL, F
ULRICI, W
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 103 (01): : 205 - 212
[28] EVALUATION OF BULK AND EPITAXIAL GAAS BY MEANS OF X-RAY TOPOGRAPHY
MEIERAN, ES
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1968, 242 (03): : 413 - &
[29] KINETICS OF SLOW DECAY OF THE PHOTOCONDUCTIVITY OF GAAS AND MODEL OF BULK 1/F NOISE IN SEMICONDUCTORS
DYAKONOVA, NV
LEVINSHTEIN, ME
PLOTKIN, DA
RUMYANTSEV, SL
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (05): : 527 - 531
[30] BULK PHOTOCONDUCTIVITY BY PHOTODETACHMENT
SOWADA, U
JOURNAL OF ELECTROSTATICS, 1982, 12 (APR) : 141 - 145

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